Multiple Scanning Knife-Edge Beam Profiler

BA-USB

Multiple Scanning Knife-Edge Beam Profiler
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BA-USB
A compact stand-alone type beam measuring device
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Name Spectral Range Beam Size Range Number of Blades Delivery Price Add to cart
i
InGaAs (IR) beam profiler, 3 blades for 800 - 1800 nm
BA3-IR3-USB
800 - 1800 nm 3 µm - 3 mm 3
1-3 weeks
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Specifications 3-blades, InGaAs Enhanced 3mm circular
Sensor Type InGaAs (IR)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 5 mW
Power Accuracy ±10%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Operating Temperature 10°C to 35°C
Measurement rate 5 Hz
i
UV-Silicon (UV-Si) beam profiler, 3 blades for 190 - 1100 nm
BA3-UV-USB
190 - 1100 nm 3 µm - 5 mm 3
1-3 weeks
-
Specifications 3-blades, UV-Si detector 5mm circular
Sensor Type UV-Silicon (UV-Si)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 1 W
Power Accuracy ±5%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measuremet Rate 5 Hz
Operating Temperature 10°C to 35°C
i
InGaAs (IR) beam profiler, 7 blades for 800 - 1800 nm
BA7-IR5-USB
800 - 1800 nm 15 µm - 5mm 7
1-3 weeks
-
Specifications 7-blades, InGaAs detector 5mm circular
Sensor Type InGaAs (IR)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 5 mW
Power Accuracy ±10%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
InGaAs Enhanced (IRE) beam profiler, 3 blades for 1200 - 2700 nm
BA3-IR3E-USB
1200 - 2700 nm 3 µm - 3 mm 3
1-3 weeks
-
Power Range 10 µW to 5 mW
Pwer Accuracy ±10%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
InGaAs (IR) beam profiler, 3 blades for 800 - 1800 nm
BA3-IR5-USB
800 - 1800 nm 3 µm - 5 mm 3
1-3 weeks
-
Specifications 3-blades, InGaAs detector 5mm circular
Sensor Type InGaAs (IR)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 5 mW
Power Accuracy ±10%
Saturation 0.1 W/cm² without filter
Operature Temperature 10°C to 35°C
i
InGaAs Enhanced (IRE) beam profiler, 7 blades for 1200 - 2700 nm
BA7-IR3E-USB
1200 - 2700 nm 15 µm - 3 mm 7
1-3 weeks
-
Specifications 7-blades, InGaAs Enhanced 3mm circular
Sensor Type InGaAs Enhanced (IRE)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 5 mW
Power Accuracy ±10%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
Silicone (Si) beam profiler, 7 blades for 350 - 1100 nm
BA7-Si-USB
350 - 1100 nm 15 µm - 9 mm 7
1-3 weeks
-
Specifications 7-blades, Si detector 9mm square
Sensor Type Silicone (Si)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 1 W
Power Accuracy ±5%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
Silicone (Si) beam profiler, 3 blades for 350 - 1100 nm
BA3-Si-USB
350 - 1100 nm 3 µm - 5 mm 3
1-3 weeks
-
Specifications 3-blades, Si detector 5mm circular
Sensor Type Silicone (Si)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 1 W
Power Accuracy ±5%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
InGaAs (IR) beam profiler, 7 blades for 800 - 1800 nm
BA7-IR3-USB
800 - 1800 nm 15 µm - 3 mm 7
1-3 weeks
-
Specifications 7-blades, InGaAs detector 3mm circular
Sensor Type InGaAs (IR)
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Beamwidth Accuracy ±2%
Power Range 10 µW to 5 mW
Power Accuracy ±10%
Position Resolution 1 µm
Position Accuracy ±15 µm
Saturation 0.1 W/cm² without filter
Measurement Rate 5 Hz
Operating Temperature 10°C to 35°C
i
UV-Silicon (UV-Si) beam profiler, 7 blades for 190 - 1100 nm
BA7-UV-USB
190 - 1100 nm 15 µm - 9 mm 7
1-3 weeks
-
Specifications 7-blades, UV-Si detector 9mm square
Sensor Type UV-Silicon (UV-Si)
Power Range 10 µW to 1 W
Position Accuracy ±15 µm
Beamwidth Accuracy ±2%
Beamwidth Resolution 1 µm for beams>100 µm in size, 0.1µm for beams<100µm in size
Operating Temperature 10°C to 35°C

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